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Proceedings Paper

(Al,Ga)N-based quantum-dot heterostructures grown by molecular beam epitaxy for the fabrication of UV LEDs
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Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97481K; doi: 10.1117/12.2210843
Show Author Affiliations
Julien Brault, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Benjamin Damilano, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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