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Proceedings Paper

Extreme ultraviolet lithography for circuit fabrication at 0.1-um feature size
Author(s): Daniel A. Tichenor; Glenn D. Kubiak; Richard H. Stulen
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Paper Abstract

Projection lithography is driven to shorter wavelengths to meet the demand for smaller critical dimensions in advanced computer chips. This trend logically extends to the extreme ultraviolet (EUV) region, where reduction imaging can be achieved using all-reflective optics. The wavelength region of primary interest is from 11 nm to 14 nm, where multilayer reflective coatings have demonstrated reflectivity greater than 60%. The leading candidate for a practical, compact source of EUV radiation is a laser plasma source, which provides sufficient conversion efficiency, about 1%, in the relevant bandwidth. This paper discusses the concept of EUV lithography bassed on a laser plasma source and describes a laboratory EUV lithography tool currently being characterized.

Paper Details

Date Published: 18 September 1995
PDF: 6 pages
Proc. SPIE 2523, Applications of Laser Plasma Radiation II, (18 September 1995); doi: 10.1117/12.220978
Show Author Affiliations
Daniel A. Tichenor, Sandia National Labs. (United States)
Glenn D. Kubiak, Sandia National Labs. (United States)
Richard H. Stulen, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 2523:
Applications of Laser Plasma Radiation II
Martin C. Richardson; George A. Kyrala, Editor(s)

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