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Proceedings Paper

High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier
Author(s): T. Umezawa; K. Katshima; A. Kanno; K. Akahane; A. Matsumoto; N. Yamamoto; T. Kawanishi
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Paper Abstract

A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

Paper Details

Date Published: 25 February 2016
PDF: 6 pages
Proc. SPIE 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 97470D (25 February 2016); doi: 10.1117/12.2209735
Show Author Affiliations
T. Umezawa, National Institute of Information and Communications Technology (Japan)
K. Katshima, Hitachi-kokusai Electric Inc. (Japan)
A. Kanno, National Institute of Information and Communications Technology (Japan)
K. Akahane, National Institute of Information and Communications Technology (Japan)
A. Matsumoto, National Institute of Information and Communications Technology (Japan)
N. Yamamoto, National Institute of Information and Communications Technology (Japan)
T. Kawanishi, National Institute of Information and Communications Technology (Japan)
Waseda Univ. (Japan)


Published in SPIE Proceedings Vol. 9747:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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