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Proceedings Paper

Improved long wavelength 14xx and 19xx nm InGaAsp/InP lasers
Author(s): T. Tanbun-Ek; R. Pathak; Z. Xu; H. Winhold; F. Zhou; M. Peters; D. Schleuning; B. Acklin
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Paper Abstract

We report on our progress developing long wavelength high power laser diodes based on the InGaAsP/InP alloy system emitting in the range from 1400 to 2010 nm. Output power levels exceeding 50 Watts CW and 40% conversion efficiency were obtained at 1470 nm wavelength from 20% fill factor (FF) bars with 2 mm cavity length mounted on water cooled plates. Using these stackable plates we built a water cooled stack with 8 bars, successfully demonstrating 400 W at 1470 nm with good reliability. In all cases the maximum conversion efficiency was greater than 40% and the maximum power achievable was limited by thermal rollover. For lasers emitting in the range from 1930 to 2010 nm we achieved output power levels over 15 W and 20 % conversion efficiency from 20% FF bars with 2 mm cavity length on a conductively cooled platform. Life testing of the 1470 nm lasers bars over 14,000 hours under constant current mode has shown no significant degradation.

Paper Details

Date Published: 4 March 2016
PDF: 7 pages
Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 973307 (4 March 2016); doi: 10.1117/12.2209723
Show Author Affiliations
T. Tanbun-Ek, Coherent, Inc. (United States)
R. Pathak, Coherent, Inc. (United States)
Z. Xu, Coherent, Inc. (United States)
H. Winhold, Coherent, Inc. (United States)
F. Zhou, Coherent, Inc. (United States)
M. Peters, Coherent, Inc. (United States)
D. Schleuning, Coherent, Inc. (United States)
B. Acklin, Coherent, Inc. (United States)


Published in SPIE Proceedings Vol. 9733:
High-Power Diode Laser Technology and Applications XIV
Mark S. Zediker, Editor(s)

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