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Proceedings Paper

Fabrication and characterization of broadband superluminescent diodes for 2 µm wavelength
Author(s): Nouman Zia; Jukka Viheriälä; Riku Koskinen; Mervi Koskinen; Soile Suomalainen; Mircea Guina
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Paper Abstract

Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest output power exhibit a narrower spectrum with about 61 nm FWHM.

Paper Details

Date Published: 16 March 2016
PDF: 9 pages
Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680Q (16 March 2016); doi: 10.1117/12.2209720
Show Author Affiliations
Nouman Zia, Tampere Univ. of Technology (Finland)
Jukka Viheriälä, Tampere Univ. of Technology (Finland)
Riku Koskinen, Tampere Univ. of Technology (Finland)
Mervi Koskinen, Tampere Univ. of Technology (Finland)
Soile Suomalainen, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 9768:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg, Editor(s)

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