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Proceedings Paper

Pushing the limits of silicon transistors
Author(s): Dzianis Saladukha; Tomasz J. Ochalski; Felipe Murphy-Armando; Michael B. Clavel; Mantu K. Hudait
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Paper Abstract

In this work we study Ge transistor structures grown on silicon substrate. We use photoluminescence to determine the band gap of Ge under tensile strain. The strain is induced by growing Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled using a 30 band k·p model based on first principles calculations. Photoluminescence measurements show a reasonable correspondence with calculated values of the band energies.

Paper Details

Date Published: 4 March 2016
PDF: 6 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974211 (4 March 2016); doi: 10.1117/12.2209606
Show Author Affiliations
Dzianis Saladukha, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)
Tomasz J. Ochalski, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)
Felipe Murphy-Armando, Tyndall National Institute (Ireland)
Michael B. Clavel, Virginia Tech. (United States)
Mantu K. Hudait, Virginia Tech. (United States)


Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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