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Proceedings Paper

High performances of very long (13.5mm) tapered laser emitting at 975 nm
Author(s): P. Resneau; M. Garcia; M. Lecomte; Y. Robert; E. Vinet; O. Parillaud; M. Krakowski; D. L. Boiko
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Paper Abstract

Mode-locked semiconductor laser technology is a promising technology candidate considered by European Space Agency (ESA) for optical metrology systems and other space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement. For these applications, we have realised a multi-section monolithic-cavity tapered laser diode with a record cavity length of 13.5 mm. The laser operates at 975 nm wavelength. It is designed for the emission of ultra-short optical pulses (<1 ps) at a repetition rate of 3 GHz with an average optical power of 600 mW. It is based on a MOVPE grown laser structure with Aluminium free active region enabling high optical gain, low internal losses and low series resistance. The first results obtained under CW pumping of such centimetre-long laser at 20 °C heatsink temperature show the lasing threshold current as low as 1.27 A and the differential external efficiency as high as 0.55 W/A.

Paper Details

Date Published: 15 March 2016
PDF: 12 pages
Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97671J (15 March 2016); doi: 10.1117/12.2209513
Show Author Affiliations
P. Resneau, III-V Lab. (France)
M. Garcia, III-V Lab. (France)
M. Lecomte, III-V Lab. (France)
Y. Robert, III-V Lab. (France)
E. Vinet, III-V Lab. (France)
O. Parillaud, III-V Lab. (France)
M. Krakowski, III-V Lab. (France)
D. L. Boiko, Ctr. Suisse d'Electronique et de Microtechnique SA (Switzerland)


Published in SPIE Proceedings Vol. 9767:
Novel In-Plane Semiconductor Lasers XV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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