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Proceedings Paper

Device characterization of the VCSEL-on-silicon as an on chip light source
Author(s): Myung-Joon Kwack; Ki-Seok Jang; Jiho Joo; Hyundai Park; Jin Hyuk Oh; Jaegyu Park; Sanggi Kim; Gyungock Kim
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Paper Abstract

Advancement of silicon photonics technology can offer a new dimension in data communications with un-precedent bandwidth. Increasing the integration level in the silicon photonics is required to develop compact high-performance chip-level optical interconnects for future systems. Especially, monolithic integration of light source on a silicon wafer is important for future silicon photonic integrated circuits, since realizing a compact on-chip light source on a silicon wafer is a serious issue which impedes practical implementation of the silicon photonic interconnects. At present, due to the lack of a practical light source based on Group IV elements, flip chip-bonded or packaged lasers based on III–V semiconductor are usually being used as external light sources, to feed silicon modulators on SOI wafers to complete a photonic transmitter, except the reported silicon hybrid lasers monolithic-integrated on SOI wafers. To overcome above problem, we have proposed a compact on-chip light source, the directly monolithic-integrated VCSEL on a bulk silicon wafer (VCSEL-on-Si), based on the transplanted epitaxial film by substrate lift-off process and following device-fabrication on the bulk Si wafer. This can offer practical low-power-consumption light sources integrated on a silicon wafer, which can provide a complete chip-level I/O set when combined with monolithic-integrated vertical-illumination Ge-on-Si photodetectors on the same silicon wafer. In this work, we report the characterization of direct-modulation VCSELs-on-Si for λ ~850 nm with CW optical output power > ~2 mW and the threshold current < ~3 mA, over 10 Gb/s operations. We also discuss about the thermal characteristics of the VCSELs-on-Si.

Paper Details

Date Published: 14 March 2016
PDF: 6 pages
Proc. SPIE 9752, Silicon Photonics XI, 97521A (14 March 2016); doi: 10.1117/12.2209458
Show Author Affiliations
Myung-Joon Kwack, Electronics and Telecommunications Research Institute (Korea, Republic of)
Ki-Seok Jang, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jiho Joo, Electronics and Telecommunications Research Institute (Korea, Republic of)
Hyundai Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jin Hyuk Oh, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jaegyu Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sanggi Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Gyungock Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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