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Proceedings Paper

InAs-based type-II superlattice long wavelength photodetectors
Author(s): Fangfang Wang; Jianxin Chen; Zhicheng Xu; Yi Zhou; Li He
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Paper Abstract

We report on the performance of long wavelength infrared type-II InAs-based InAs/GaAsSb superlattice photodiodes grown by molecular-beam epitaxy. The detectors had a 100% cutoff wavelength of ~ 9.7 μm and a peak current responsivity of 2.16 A/W at 80 K. The dark current density at -50 mV bias was 6.4×10-4 A/cm2 and the resistance-area product at zero bias (R0A) was 36.9 Ωcm2. The black body detectivity and peak detectivity were 7.5×1010 cm Hz1/2/W and 1.97×1011 cm Hz1/2/W, respectively. The quantum efficiency at 7.6 μm was measured to be ~34%. Good agreement was achieved between the measured I-V curves and the simulated ones, and between the experimental and theoretically predicted differential resistance values. At temperatures exceeding 75 K diffusion currents dominate the device performance. In the temperature range between 65 and 75 K, the performance of the InAs-based SL photodiodes is limited by GR processes. Trap-assisted tunneling current provides a significant contribution at temperatures below 65 K, while coherent tunneling currents are not of importance.

Paper Details

Date Published: 13 February 2016
PDF: 7 pages
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 975519 (13 February 2016); doi: 10.1117/12.2209424
Show Author Affiliations
Fangfang Wang, Shanghai Institute of Technical Physics (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Zhicheng Xu, Shanghai Institute of Technical Physics (China)
Yi Zhou, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9755:
Quantum Sensing and Nano Electronics and Photonics XIII
Manijeh Razeghi, Editor(s)

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