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Proceedings Paper

Fabrication and characterization of the Pd-silicided emitters for field-emission devices
Author(s): Chih-Chong Wang; Tze-Kun Ku; Ming Shiann Feng; Iing-Jar Hsieh; Huang-Chung Cheng
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Paper Abstract

The structure of Pd-silicided field emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening, coating metal and furnace annealing in N2 ambient. The sheet resistance and Auger electron spectroscope results depict the transformation of silicidation. Transmission electron microscope of bright-field, dark-field, and diffraction pattern show the formation of silicided emitters. These emitters have potential applications in vacuum microelectronics to obtain superior lifetime, relaibility, and stability.

Paper Details

Date Published: 13 September 1995
PDF: 8 pages
Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995); doi: 10.1117/12.220936
Show Author Affiliations
Chih-Chong Wang, National Chiao Tung Univ. (Taiwan)
Tze-Kun Ku, National Chiao Tung Univ. (Taiwan)
Ming Shiann Feng, National Chiao Tung Univ. (Taiwan)
Iing-Jar Hsieh, Chung-Hua Polytechnic Institute (Taiwan)
Huang-Chung Cheng, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 2641:
Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications
Wayne Bailey; M. Edward Motamedi; Fang-Chen Luo, Editor(s)

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