Share Email Print
cover

Proceedings Paper

Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 um
Author(s): Tze-Kun Ku; B. B. Hsieh; Maw S. Chen; Chi-Chang Wang; P. W. Wang; Iing-Jar Hsieh; Huang-Chung Cheng
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High aspect-ratio single-crystal microtips have been fabricated using the semi-anisotropic dry etching technique. After the further oxidation sharpening process, arrays of 50 X 50 uniform sharp emitter tips has been achieved. The 200 angstrom-thick Cr metal was also coated on the surface of Si microtips to improve the performance. Furthermore, a modified self-aligned process of the gated field emitter arrays has been successfully developed to reduce the fabrication complexity. Employing this method, the tip radius of Si microemitter is about 200 angstrom, and the gate aperture can be easily reduced to about 0.3 micrometers . It will largely decrease the turn-on voltage of the field emission devices.

Paper Details

Date Published: 13 September 1995
PDF: 5 pages
Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995); doi: 10.1117/12.220935
Show Author Affiliations
Tze-Kun Ku, National Chiao Tung Univ. (Taiwan)
B. B. Hsieh, National Chiao Tung Univ. (Taiwan)
Maw S. Chen, National Chiao Tung Univ. (Taiwan)
Chi-Chang Wang, National Chiao Tung Univ. (Taiwan)
P. W. Wang, National Chiao Tung Univ. (Taiwan)
Iing-Jar Hsieh, Chung-Hua Polytechnic Institute (Taiwan)
Huang-Chung Cheng, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 2641:
Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications
Wayne Bailey; M. Edward Motamedi; Fang-Chen Luo, Editor(s)

© SPIE. Terms of Use
Back to Top