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Proceedings Paper

Gas-phase silicon micromachining with xenon difluoride
Author(s): Floy I. Chang; Richard Yeh; Gisela Lin; Patrick B. Chu; Eric G. Hoffman; Ezekiel J. Kruglick; Kristofer S. J. Pister; Michael H. Hecht
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Paper Abstract

Xenon difluoride is a gas phase, room temperature, isotropic silicon etchant with extremely high selectivity to many materials commonly used in microelectromechancial systems, including photoresists, aluminum, and silicon dioxide. Using a simple vacuum system, the effects of etch aperture and loading were explored for etches between 10 and 200 micrometers . Etch rates as high as 40 micrometers /minute were observed. Initial characteriation of wafer surface temperature during the etch indicates tens of degrees of self-heating, which is known to cause substantial decrease in etch rate.

Paper Details

Date Published: 13 September 1995
PDF: 12 pages
Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995); doi: 10.1117/12.220933
Show Author Affiliations
Floy I. Chang, Univ. of California/Los Angeles (United States)
Richard Yeh, Univ. of California/Los Angeles (United States)
Gisela Lin, Univ. of California/Los Angeles (United States)
Patrick B. Chu, Univ. of California/Los Angeles (United States)
Eric G. Hoffman, Univ. of California/Los Angeles (United States)
Ezekiel J. Kruglick, Univ. of California/Los Angeles (United States)
Kristofer S. J. Pister, Univ. of California/Los Angeles (United States)
Michael H. Hecht, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 2641:
Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications
Wayne Bailey; M. Edward Motamedi; Fang-Chen Luo, Editor(s)

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