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Proceedings Paper

High-conductivity p-type layer with an alternating p-GaN/u-GaN structure
Author(s): Hao-Tsung Chen; Yu-Feng Yao; Charng-Gan Tu; Chia-Ying Su; Chun-Han Lin; Chieh Hsieh; Chih-Chung Yang
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Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480E; doi: 10.1117/12.2209230
Show Author Affiliations
Hao-Tsung Chen, National Taiwan Univ. (Taiwan)
Yu-Feng Yao, National Taiwan Univ. (Taiwan)
Charng-Gan Tu, National Taiwan Univ. (Taiwan)
Chia-Ying Su, National Taiwan Univ. (Taiwan)
Chun-Han Lin, National Taiwan Univ. (Taiwan)
Chieh Hsieh, National Taiwan Univ. (Taiwan)
Chih-Chung Yang, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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