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Proceedings Paper

Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems
Author(s): Taiichi Otsuji; Kenta Sugawara; Gen Tamamushi; Adrian Dobroiu; Tetsuya Suemitsu; Victor Ryzhii; Katsumi Iwatsuki; Shigeru Kuwano; Jun-ichi Kani; Jun Terada
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Paper Abstract

This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.

Paper Details

Date Published: 12 February 2016
PDF: 9 pages
Proc. SPIE 9772, Broadband Access Communication Technologies X, 977204 (12 February 2016); doi: 10.1117/12.2209211
Show Author Affiliations
Taiichi Otsuji, Tohoku Univ. (Japan)
Kenta Sugawara, Tohoku Univ. (Japan)
Gen Tamamushi, Tohoku Univ. (Japan)
Adrian Dobroiu, Tohoku Univ. (Japan)
Tetsuya Suemitsu, Tohoku Univ. (Japan)
Victor Ryzhii, Tohoku Univ. (Japan)
Katsumi Iwatsuki, Tohoku Univ. (Japan)
Shigeru Kuwano, NTT Access Network Service Systems Labs. (Japan)
Jun-ichi Kani, NTT Access Network Service Systems Labs. (Japan)
Jun Terada, NTT Access Network Service Systems Labs. (Japan)


Published in SPIE Proceedings Vol. 9772:
Broadband Access Communication Technologies X
Benjamin B. Dingel; Katsutoshi Tsukamoto, Editor(s)

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