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Proceedings Paper

Radiation tolerance studies of long wavelength infrared InAs/GaSb detectors
Author(s): Alexander Soibel; Sir B. Rafol; Arezou Khoshakhlagh; Jean Nguyen; Linda Hoglund; Anita Fisher; Sam A. Keo; David Z.-Y. Ting; Sarath D. Gunapala
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Paper Abstract

In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λc = 10.2μm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from jd = 5x10-5 A/cm2 at Vb = 0.1V and T = 80K to jd = 6x10-3 A/cm2 at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.

Paper Details

Date Published: 13 February 2016
PDF: 8 pages
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 975511 (13 February 2016); doi: 10.1117/12.2209187
Show Author Affiliations
Alexander Soibel, Jet Propulsion Lab. (United States)
Sir B. Rafol, Jet Propulsion Lab. (United States)
Arezou Khoshakhlagh, Jet Propulsion Lab. (United States)
Jean Nguyen, Jet Propulsion Lab. (United States)
Linda Hoglund, Jet Propulsion Lab. (United States)
Anita Fisher, Jet Propulsion Lab. (United States)
Sam A. Keo, Jet Propulsion Lab. (United States)
David Z.-Y. Ting, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 9755:
Quantum Sensing and Nano Electronics and Photonics XIII
Manijeh Razeghi, Editor(s)

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