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Proceedings Paper

Atomic layer epitaxy for quantum well nitride-based devices
Author(s): Jennifer Hite; Neeraj Nepal; Virginia R. Anderson; Jaime A. Freitas; Michael A. Mastro; Charles R. Eddy
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Paper Abstract

The development and characterization of nitride QW structures grown by atomic layer epitaxy (ALEp) for device applications are discussed. We have grown epitaxial thin films (4-10nm) covering the full range of binary and ternary III-N compositions by ALEp. In this work, ALEp-grown QW structures are presented. Optical characteristics are discussed. Characterization of layer interfaces and composition are critical to the development of this growth technique for quantum-based devices. Structures to study this by atom probe tomography have been created. By understanding the structure of crystalline ALEp films with nanometer-scale thickness, the unique properties of these materials can be advanced for quantum-scale applications.

Paper Details

Date Published: 13 February 2016
PDF: 6 pages
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97551W (13 February 2016); doi: 10.1117/12.2209111
Show Author Affiliations
Jennifer Hite, U.S. Naval Research Lab. (United States)
Neeraj Nepal, Sotera Defense Solutions (United States)
Virginia R. Anderson, American Society for Engineering Education (United States)
Jaime A. Freitas, U.S. Naval Research Lab. (United States)
Michael A. Mastro, U.S. Naval Research Lab. (United States)
Charles R. Eddy, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 9755:
Quantum Sensing and Nano Electronics and Photonics XIII
Manijeh Razeghi, Editor(s)

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