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Proceedings Paper

High-speed directly modulated 1.5-um quantum dot lasers
Author(s): Saddam Banyoudeh; Alireza Abdollahinia; Ori Eyal; Florian Schnabel; Vitalii Sichkovskyi; Gadi Eisenstein; Johann Peter Reithmaier
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Paper Abstract

Due to the discrete density of states distribution and spatial localization of carriers in quantum dot (QD) material, the dynamics should be strongly enhanced in comparison to quantum well material. Based on improved 1.5 μm InAs/InGaAlAs/InP QD gain material short cavity ridge waveguide lasers were fabricated. Devices with cavity, lengths of 230 to 338 μm with high reflection coatings on the backside exhibit record value for any QD laser in small and large signal modulation performance with up to 15 GHz and 36 GBit/s, respectively, obtained at 14 °C. Due to the high temperature stability of threshold current and external differential efficiency, the lasers exhibit also nearly constant modulation bandwidth between 14-60 °C.

Paper Details

Date Published: 7 March 2016
PDF: 6 pages
Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670L (7 March 2016); doi: 10.1117/12.2209095
Show Author Affiliations
Saddam Banyoudeh, Univ. Kassel (Germany)
Alireza Abdollahinia, Univ. Kassel (Germany)
Ori Eyal, Technion-Israel Institute of Technology (Israel)
Florian Schnabel, Univ. Kassel (Germany)
Vitalii Sichkovskyi, Univ. Kassel (Germany)
Gadi Eisenstein, Technion-Israel Institute of Technology (Israel)
Johann Peter Reithmaier, Univ. Kassel (Germany)


Published in SPIE Proceedings Vol. 9767:
Novel In-Plane Semiconductor Lasers XV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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