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Proceedings Paper

Hexagonal boron nitride (h-BN) epilayers: growth, properties, and applications
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Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974803; doi: 10.1117/12.2208947
Show Author Affiliations
Hongxing Jiang, Texas Tech Univ. (United States)
Jingyu Lin, Texas Tech Univ. (United States)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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