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Proceedings Paper

Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems
Author(s): V. A. Shchukin; N. N. Ledentsov; T. Slight; W. Meredith; N. Yu. Gordeev; A. M. Nadtochy; A. S. Payusov; M. V. Maximov; S. A. Blokhin; A. A. Blokhin; Yu. M. Zadiranov; N. A. Maleev; V. M. Ustinov; K. D. Choquette
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Paper Abstract

A concept of passive cavity surface–emitting laser is proposed aimed to control the temperature shift of the lasing wavelength. The device contains an all–semiconductor bottom distributed Bragg reflector (DBR), in which the active medium is placed, a dielectric resonant cavity and a dielectric top DBR, wherein at least one of the dielectric materials has a negative temperature coefficient of the refractive index, dn/dT < 0. This is shown to be the case for commonly used dielectric systems SiO2/TiO2 and SiO2/Ta2O5. Two SiO2/TiO2 resonant structures having a cavity either of SiO2 or TiO2 were deposited on a substrate, their optical power reflectance spectra were measured at various temperatures, and refractive index temperature coefficients were extracted, dn/dT = 0.0021 K-1 for SiO2 and dn/dT = –0.0092 K-1 for TiO2. Using such dielectric materials allows designing passive cavity surface–emitting lasers having on purpose either positive, or zero, or negative temperature shift of the lasing wavelength dλ/dT. A design for temperature–insensitive lasing wavelength (dλ/dT = 0) is proposed. Employing devices with temperature–insensitive lasing wavelength in wavelength division multiplexing systems may allow significant reducing of the spectral separation between transmission channels and an increase in number of channels for a defined spectral interval enabling low cost energy efficient uncooled devices.

Paper Details

Date Published: 4 March 2016
PDF: 10 pages
Proc. SPIE 9766, Vertical-Cavity Surface-Emitting Lasers XX, 976609 (4 March 2016); doi: 10.1117/12.2208915
Show Author Affiliations
V. A. Shchukin, VI Systems GmbH (Germany)
A. F. Ioffe Physical Technical Institute (Russian Federation)
N. N. Ledentsov, VI Systems GmbH (Germany)
A. F. Ioffe Physical Technical Institute (Russian Federation)
T. Slight, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
W. Meredith, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
N. Yu. Gordeev, A. F. Ioffe Physical Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
A. M. Nadtochy, A. F. Ioffe Physical Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
A. S. Payusov, A. F. Ioffe Physical Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
M. V. Maximov, A. F. Ioffe Physical Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
S. A. Blokhin, A. F. Ioffe Physical Technical Institute (Russian Federation)
A. A. Blokhin, A. F. Ioffe Physical Technical Institute (Russian Federation)
Yu. M. Zadiranov, A. F. Ioffe Physical Technical Institute (Russian Federation)
N. A. Maleev, A. F. Ioffe Physical Technical Institute (Russian Federation)
V. M. Ustinov, A. F. Ioffe Physical Technical Institute (Russian Federation)
K. D. Choquette, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 9766:
Vertical-Cavity Surface-Emitting Lasers XX
Kent D. Choquette; James K. Guenter, Editor(s)

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