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Proceedings Paper

Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs
Author(s): Johannes Glaab; Neysha Lobo Ploch; Jens Rass; Tim Kolbe; Tim Wernicke; Frank Mehnke; Christian Kuhn; Johannes Enslin; Christoph Stölmacker; Viola Kueller; Arne Knauer; Sven Einfeldt; Markus Weyers; Michael Kneissl
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Paper Abstract

In this paper we report on the influence of the heterostructure design of (InAlGa)N-based UV-B LEDs grown by metalorganic vapor phase epitaxy on sapphire substrates on the degradation behavior of the device. Two types of LEDs with different heterostructure design, resulting in peak-wavelengths of about 290 nm and 310 nm, respectively, were stressed at a constant operation current of 100 mA and a heat sink temperature of 20°C. Electro-optical characterization of the LEDs over 1.000 h of operation shows two different degradation modes with respect to the change of the emission spectrum and leakage current. The first mode during the initial hours (290 nm LED: 0 h - 500 h, 310 nm LED: 0 h – 100 h) of operation is represented by a fast reduction of the quantum well (QW) luminescence, a constant or increasing parasitic luminescence between 310 nm and 450 nm and a fast increase of the reverse- and forward-bias leakage current. These changes are more pronounced (higher degradation rate) in the 290 nm LEDs and can therefore be attributed to the different heterostructure design. In contrast, the second degradation mode at longer operation times (290 nm LED: >500 h, 310 nm LED: >100 h) is marked by a slow reduction of both the QW and the parasitic luminescence, as well as a slow increase of the leakage current which are similar for both types of LEDs. Furthermore, the second mode is marked by a square-root time dependence of the QW luminescence intensity, indicating a diffusion process to be involved.

Paper Details

Date Published: 26 February 2016
PDF: 7 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97481O (26 February 2016); doi: 10.1117/12.2208906
Show Author Affiliations
Johannes Glaab, Ferdinand-Braun-Institut (Germany)
Neysha Lobo Ploch, Ferdinand-Braun-Institut (Germany)
Jens Rass, Ferdinand-Braun-Institut (Germany)
Tim Kolbe, Ferdinand-Braun-Institut (Germany)
Tim Wernicke, Technische Univ. Berlin (Germany)
Frank Mehnke, Technische Univ. Berlin (Germany)
Christian Kuhn, Technische Univ. Berlin (Germany)
Johannes Enslin, Technische Univ. Berlin (Germany)
Christoph Stölmacker, Ferdinand-Braun-Institut (Germany)
Viola Kueller, Ferdinand-Braun-Institut (Germany)
Arne Knauer, Ferdinand-Braun-Institut (Germany)
Sven Einfeldt, Ferdinand-Braun-Institut (Germany)
Markus Weyers, Ferdinand-Braun-Institut (Germany)
Michael Kneissl, Ferdinand-Braun-Institut (Germany)
Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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