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Proceedings Paper

Studies on 405nm blue-violet diode laser with external grating cavity
Author(s): Bin Li; Jun Gao; Jun Zhao; Anlan Yu; Shiwen Luo; Dongsheng Xiong; Xinbing Wang; Duluo Zuo
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Paper Abstract

Spectroscopy applications of free-running laser diodes (LD) are greatly restricted as its broad band spectral emission. And the power of a single blue-violet LD is around several hundred milliwatts by far, it is of great importance to obtain stable and narrow line-width laser diodes with high efficiency. In this paper, a high efficiency external cavity diode laser (ECDL) with high output power and narrow band emission at 405 nm is presented. The ECDL is based on a commercially available LD with nominal output power of 110 mW at an injection current of 100 mA. The spectral width of the free-running LD is about 1 nm (FWHM). A reflective holographic grating which is installed on a home-made compact adjustable stage is utilized for optical feedback in Littrow configuration. In this configuration, narrow line-width operation is realized and the effects of grating groove density as well as the groove direction related to the beam polarization on the performances of the ECDL are experimentally investigated. In the case of grating with groove density of 3600 g/mm, the threshold is reduced from 21 mA to 18.3 mA or 15.6 mA and the tuning range is 3.95 nm or 6.01 nm respectively when the grating is orientated in TE or TM polarization. In addition, an output beam with a line-width of 30 pm and output power of 92.7 mW is achieved in TE polarization. With these narrow line-width and high efficiency, the ECDL is capable to serve as a light source for spectroscopy application such as Raman scattering and laser induced fluorescence.

Paper Details

Date Published: 7 March 2016
PDF: 8 pages
Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670E (7 March 2016); doi: 10.1117/12.2208893
Show Author Affiliations
Bin Li, Huazhong Univ. of Science and Technology (China)
Jun Gao, Huazhong Univ. of Science and Technology (China)
Jun Zhao, Huazhong Univ. of Science and Technology (China)
Anlan Yu, Huazhong Univ. of Science and Technology (China)
Shiwen Luo, Huazhong Univ. of Science and Technology (China)
Dongsheng Xiong, Huazhong Univ. of Science and Technology (China)
Xinbing Wang, Huazhong Univ. of Science and Technology (China)
Duluo Zuo, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9767:
Novel In-Plane Semiconductor Lasers XV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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