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Proceedings Paper

3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy
Author(s): Heng Li; Chiao-Yun Chang; Hui-Yu Cheng; Wei-Liang Chen; Yi-Hsin Huang; Tien-Chang Lu; Yu-Ming Chang
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Paper Abstract

The key issue for light emission strength of GaN-based LEDs is the high defect density and strain in MQWs causing the electric polarization fields. In this work, we construct 3D confocal microspectroscopy to clarify strain distribution and the relationship between photoluminescence (PL) intensity and pattern sapphire substrate (PSS). From 3D construction of E2high Raman and PL mapping, the dislocation in MQW can be traced to the cone tip of PSS and the difference in E2high Raman mapping between substrate and surface is also measured. The ability to measure strain change in 3D structure nondestructively can be applied to explore many structural problems of GaN-based optoelectronic devices.

Paper Details

Date Published: 8 March 2016
PDF: 6 pages
Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 976813 (8 March 2016); doi: 10.1117/12.2208856
Show Author Affiliations
Heng Li, National Chiao Tung Univ. (Taiwan)
Chiao-Yun Chang, National Chiao Tung Univ. (Taiwan)
Hui-Yu Cheng, National Taiwan Univ. (Taiwan)
Wei-Liang Chen, National Taiwan Univ. (Taiwan)
Yi-Hsin Huang, National Taiwan Univ. (Taiwan)
Tien-Chang Lu, National Chiao Tung Univ. (Taiwan)
Yu-Ming Chang, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9768:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg, Editor(s)

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