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Proceedings Paper

HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut
Author(s): Malgorzata Iwinska; Mikolaj Amilusik; Michal Fijalkowski; Tomasz Sochacki; Boleslaw Lucznik; Ewa Grzanka; Elzbieta Litwin-Staszewska; Anna Nowakowska-Siwinska; Izabella Grzegory; Eric Guiot; Raphael Caulmilone; Martin Seiss; Tobias Mrotzek; Michal Bockowski
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Paper Abstract

Advanced Substrates consist of a 200-nm-thick GaN layer bonded to a handler wafer. The thin layer is separated from source material by Smart CutTM technology. GaN on Sapphire Advanced Substrates were used as seeds in HVPE-GaN growth. Unintentionally doped and silicon-doped GaN layers were crystallized. Free-standing HVPE-GaN was characterized by X-ray diffraction, defect selective etching, photo-etching, Hall method, Raman spectroscopy, and secondary ion mass spectrometry. The results were compared to HVPE-GaN grown on standard MOCVD-GaN/sapphire templates.

Paper Details

Date Published: 26 February 2016
PDF: 9 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974809 (26 February 2016); doi: 10.1117/12.2208854
Show Author Affiliations
Malgorzata Iwinska, Institute of High Pressure Physics (Poland)
Mikolaj Amilusik, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Michal Fijalkowski, Institute of High Pressure Physics (Poland)
Tomasz Sochacki, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Boleslaw Lucznik, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Ewa Grzanka, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Elzbieta Litwin-Staszewska, Institute of High Pressure Physics (Poland)
Anna Nowakowska-Siwinska, TopGaN Ltd. (Poland)
Izabella Grzegory, Institute of High Pressure Physics (Poland)
Eric Guiot, Soitec S.A. (France)
Raphael Caulmilone, Soitec S.A. (France)
Martin Seiss, PLANSEE SE (Austria)
Tobias Mrotzek, PLANSEE SE (Austria)
Michal Bockowski, Institute of High Pressure Physics (Poland)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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