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Proceedings Paper

Microwave radiation absorption and Shubnikov: de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells
Author(s): Maya P. Mikhaliova; Anatoly I. Veinger; Igor V. Kochman; Petr V. Semenikhin; Karina V. Kalinina; Robert V. Parfeniev; Vyacheslav A. Berezovets; Alice Hospodková; Jiří Pangrác; Eduard Hulicius
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Paper Abstract

Strong Shubnikov – de Haas (SdH) oscillations were observed in the derivative of microwave absorption (f = 10 GHz) in the InAs/GaSb/AlSb composite quantum wells (CQWs) using electron-paramagnetic-resonance spectroscopy at low temperatures (2.7–20 K) and in the magnetic field up to 14 kOe. CQWs were grown on the n-GaSb:Te(100) and n- InAs:Mn(100) substrates with various width of QWs by MOVPE. Predominance contribution of the bulk n-GaSb substrate in SdH oscillations was manifested. Two frequencies of the SdH oscillations were found from Fourier analysis, which is connected to warping of the Fermi surface of GaSb. Unusual angular indicatrix was observed in dependence on orientation of the samples in the magnetic field. Obtained results can be explained by inversion asymmetry, which is a feature of the substances with lack of inversion centres. For CQWs grown on n-InAs:Mn (ns = 1.1 × 1017 cm-3) substrate, only several SdH oscillations with higher period were observed. Taking into account isotropic Fermi surface of bulk InAs, we succeeded to extract a contribution of the 2D carriers of InAs QW ~ H⊥,where H⊥= HconstcosΘ, from bulk substrate oscillations using special spline interpolation from angular dependence of SdH oscillatory amplitudes in the angle range 0–90°. 2D electron concentration in the InAs QW ns ≈ 1 – 3 × 1011 cm-2 was evaluated from oscillatory period.

Paper Details

Date Published: 13 February 2016
PDF: 7 pages
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97552R (13 February 2016); doi: 10.1117/12.2208588
Show Author Affiliations
Maya P. Mikhaliova, Ioffe Physical-Technical Institute (Russian Federation)
Anatoly I. Veinger, Ioffe Physical-Technical Institute (Russian Federation)
Igor V. Kochman, Ioffe Physical-Technical Institute (Russian Federation)
Petr V. Semenikhin, Ioffe Physical-Technical Institute (Russian Federation)
Karina V. Kalinina, Ioffe Physical-Technical Institute (Russian Federation)
Robert V. Parfeniev, Ioffe Physical-Technical Institute (Russian Federation)
Vyacheslav A. Berezovets, Ioffe Physical-Technical Institute (Russian Federation)
Alice Hospodková, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Jiří Pangrác, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Eduard Hulicius, Institute of Physics of the ASCR, v.v.i. (Czech Republic)

Published in SPIE Proceedings Vol. 9755:
Quantum Sensing and Nano Electronics and Photonics XIII
Manijeh Razeghi, Editor(s)

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