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Theoretical investigations of optical properties of Ga(In)AsBi quantum well systems using 8-band and 14-band models
Author(s): M. Gladysiewicz; I. Ivashev; M. S. Wartak
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Paper Abstract

We report on possible consequences of alloying of GaAs with GaBi or InBi on band structure and material gain of quantum wells. Typical considered structure consists of 8nm wide GaAsBi quantum well on GaAs substrate. Our analysis is performed using 8-band and 14-band kp models. The obtained results indicate that for GaInAsBi/InP quantum well with 5% of Bi it might be possible to achieve emission wavelengths around 4 μm .

Paper Details

Date Published: 4 March 2016
PDF: 8 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974218 (4 March 2016); doi: 10.1117/12.2208366
Show Author Affiliations
M. Gladysiewicz, Wroclaw Univ. of Technology (Poland)
Wilfred Laurier Univ. (Canada)
I. Ivashev, Wilfrid Laurier Univ. (Canada)
M. S. Wartak, Wilfrid Laurier Univ. (Canada)
Wroclaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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