Share Email Print

Proceedings Paper

Generation of 7W nanosecond pulses with 670nm ridge-waveguide lasers
Author(s): A. Klehr; T. Prziwarka; A. Liero; Th. Hoffmann; J. Pohl; J. Fricke; H.-J. Wünsche; H. Wenzel; W. Heinrich; G. Erbert
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The aim of this paper is to present detailed experimental and theoretical investigations of the behavior of ridge-waveguide (RW) lasers emitting at 670 nm under injection of sub-ns current pulses with high amplitudes. The RW lasers are based on strained GaInP double quantum wells embedded in an asymmetric AlGaInP/AlInP waveguide structure. The width of the ridge is 15 μm and the cavity length 3 mm. The laser diode is mounted on an in-house developed laser driver with a final stage based on GaN transistors, which generates nearly rectangular shaped current pulses with amplitudes up to 30 A and widths down to 300 ps. The pulse width can be varied electronically between 300 ps and 1.2 ns with a repetition frequency up to 1 MHz, which results in a variation of the pulse width of the emitted optical pulses between 200 ps and 1.2 ns. The maximum pulse power depends on the electrical pulse width and reaches 7.2 W for a ridge width of 15 μm. At high pulse current amplitudes the pulse power saturates. Time-dependent simulations with the drift-diffusion simulator WIAS-TeSCA reveal that accumulation of excess electrons under the ridge is the root cause for the power saturation, limiting the maximum achievable output power.

Paper Details

Date Published: 7 March 2016
PDF: 12 pages
Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 976705 (7 March 2016); doi: 10.1117/12.2208333
Show Author Affiliations
A. Klehr, Ferdinand-Braun-Institut (Germany)
T. Prziwarka, Ferdinand-Braun-Institut (Germany)
A. Liero, Ferdinand-Braun-Institut (Germany)
Th. Hoffmann, Ferdinand-Braun-Institut (Germany)
J. Pohl, Ferdinand-Braun-Institut (Germany)
J. Fricke, Ferdinand-Braun-Institut (Germany)
H.-J. Wünsche, Ferdinand-Braun-Institut (Germany)
H. Wenzel, Ferdinand-Braun-Institut (Germany)
W. Heinrich, Ferdinand-Braun-Institut (Germany)
G. Erbert, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 9767:
Novel In-Plane Semiconductor Lasers XV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top