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Proceedings Paper

Generation of 7W nanosecond pulses with 670nm ridge-waveguide lasers
Author(s): A. Klehr; T. Prziwarka; A. Liero; Th. Hoffmann; J. Pohl; J. Fricke; H.-J. Wünsche; H. Wenzel; W. Heinrich; G. Erbert
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Paper Abstract

The aim of this paper is to present detailed experimental and theoretical investigations of the behavior of ridge-waveguide (RW) lasers emitting at 670 nm under injection of sub-ns current pulses with high amplitudes. The RW lasers are based on strained GaInP double quantum wells embedded in an asymmetric AlGaInP/AlInP waveguide structure. The width of the ridge is 15 μm and the cavity length 3 mm. The laser diode is mounted on an in-house developed laser driver with a final stage based on GaN transistors, which generates nearly rectangular shaped current pulses with amplitudes up to 30 A and widths down to 300 ps. The pulse width can be varied electronically between 300 ps and 1.2 ns with a repetition frequency up to 1 MHz, which results in a variation of the pulse width of the emitted optical pulses between 200 ps and 1.2 ns. The maximum pulse power depends on the electrical pulse width and reaches 7.2 W for a ridge width of 15 μm. At high pulse current amplitudes the pulse power saturates. Time-dependent simulations with the drift-diffusion simulator WIAS-TeSCA reveal that accumulation of excess electrons under the ridge is the root cause for the power saturation, limiting the maximum achievable output power.

Paper Details

Date Published: 7 March 2016
PDF: 12 pages
Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 976705 (7 March 2016); doi: 10.1117/12.2208333
Show Author Affiliations
A. Klehr, Ferdinand-Braun-Institut (Germany)
T. Prziwarka, Ferdinand-Braun-Institut (Germany)
A. Liero, Ferdinand-Braun-Institut (Germany)
Th. Hoffmann, Ferdinand-Braun-Institut (Germany)
J. Pohl, Ferdinand-Braun-Institut (Germany)
J. Fricke, Ferdinand-Braun-Institut (Germany)
H.-J. Wünsche, Ferdinand-Braun-Institut (Germany)
H. Wenzel, Ferdinand-Braun-Institut (Germany)
W. Heinrich, Ferdinand-Braun-Institut (Germany)
G. Erbert, Ferdinand-Braun-Institut (Germany)


Published in SPIE Proceedings Vol. 9767:
Novel In-Plane Semiconductor Lasers XV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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