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Proceedings Paper

Advances in AlGaInN laser diode technology for defence and sensing applications
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; M. Boćkowski; M. Leszczyński; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski
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Paper Abstract

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, atomic clock and quantum information, free-space and underwater telecom and lidar.

Paper Details

Date Published: 13 May 2016
PDF: 7 pages
Proc. SPIE 9834, Laser Technology for Defense and Security XII, 98340K (13 May 2016); doi: 10.1117/12.2208328
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
M. Boćkowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Kucharski, Ammono S.A. (Poland)
G. Targowski, TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 9834:
Laser Technology for Defense and Security XII
Mark Dubinskii; Stephen G. Post, Editor(s)

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