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Proceedings Paper

High-power CW GaSb type-I gain chips as single-frequency sources for widely tunable spectroscopy in the mid-infrared
Author(s): Ieva Šimonytė; Edgaras Dvinelis; Ramūnas Songaila; Augustinas Trinkūnas; Mindaugas Greibus; Kristijonas Vizbaras; Augustinas Vizbaras
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Paper Abstract

In this work we present latest results on mid-infrared GaSb gain chips as high-output power narrow-linewidth continuouswave single-frequency laser sources for ultra-widely tunable spectroscopy and sensing applications. More than 30 mW CW output power with over 100 nm / chip tuning and < 1 MHz linewidth performance is demonstrated in the entire band from 1900 nm – 2450 nm covering most essential absorption features from CO, CO2, NH3, CH4 and N2O for environmental and medical applications. Finally, we report on complete single-frequency laser system with integrated gain-chip for highresolution spectroscopy and sensor applications.

Paper Details

Date Published: 13 February 2016
PDF: 8 pages
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97550J (13 February 2016); doi: 10.1117/12.2207461
Show Author Affiliations
Ieva Šimonytė, Brolis Semiconductors UAB (Lithuania)
Edgaras Dvinelis, Brolis Semiconductors UAB (Lithuania)
Ramūnas Songaila, Brolis Semiconductors UAB (Lithuania)
Augustinas Trinkūnas, Brolis Semiconductors UAB (Lithuania)
Mindaugas Greibus, Brolis Semiconductors UAB (Lithuania)
Kristijonas Vizbaras, Brolis Semiconductors UAB (Lithuania)
Augustinas Vizbaras, Brolis Semiconductors UAB (Lithuania)


Published in SPIE Proceedings Vol. 9755:
Quantum Sensing and Nano Electronics and Photonics XIII
Manijeh Razeghi, Editor(s)

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