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Proceedings Paper

Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
Author(s): Emanuel P. Haglund; Sulakshna Kumari; Petter Westbergh; Johan S. Gustavsson; Gunther Roelkens; Roel Baets; Anders Larsson
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Paper Abstract

We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.

Paper Details

Date Published: 4 March 2016
PDF: 7 pages
Proc. SPIE 9766, Vertical-Cavity Surface-Emitting Lasers XX, 976607 (4 March 2016); doi: 10.1117/12.2207301
Show Author Affiliations
Emanuel P. Haglund, Chalmers Univ. of Technology (Sweden)
Sulakshna Kumari, Univ. Gent (Belgium)
Petter Westbergh, Chalmers Univ. of Technology (Sweden)
Johan S. Gustavsson, Chalmers Univ. of Technology (Sweden)
Gunther Roelkens, Univ. Gent (Belgium)
Roel Baets, Univ. Gent (Belgium)
Anders Larsson, Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 9766:
Vertical-Cavity Surface-Emitting Lasers XX
Kent D. Choquette; James K. Guenter, Editor(s)

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