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Proceedings Paper

AlGaInN laser diode technology for systems applications
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; M. Bockowski; M. Leszczyński; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski; S. Watson; A. E. Kelly
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Paper Abstract

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.

Paper Details

Date Published: 26 February 2016
PDF: 9 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974819 (26 February 2016); doi: 10.1117/12.2207231
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
M. Bockowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Kucharski, Ammono S.A. (Poland)
G. Targowski, TopGaN Ltd. (Poland)
S. Watson, Univ. of Glasgow (United Kingdom)
A. E. Kelly, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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