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Proceedings Paper

Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth
Author(s): Tatsushi Hamaguchi; Noriyuki Fuutagawa; Shouichiro Izumi; Masahiro Murayama; Hironobu Narui
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Paper Abstract

We have succeeded in achieving continuous-wave operation of gallium nitride (GaN) based vertical-cavity surfaceemitting lasers (VCSELs), which was fabricated by epitaxial lateral overgrowth (ELO) using dielectric distributed Bragg reflectors(DBRs) as masks for selective growth. The device exhibited CW operation at a wavelength of 453.9nm. The maximum output power was 1.1 mW, which is the highest value reported in previously published articles. The ELO process used for this study represents a breakthrough for challenges which were indicated by other former reports for GaN-based VCSELs and is suitable for mass production.

Paper Details

Date Published: 26 February 2016
PDF: 6 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974817 (26 February 2016); doi: 10.1117/12.2207222
Show Author Affiliations
Tatsushi Hamaguchi, Sony Corp. (Japan)
Noriyuki Fuutagawa, Sony Corp. (Japan)
Shouichiro Izumi, Sony Corp. (Japan)
Masahiro Murayama, Sony Corp. (Japan)
Hironobu Narui, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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