Share Email Print
cover

Proceedings Paper

ZnO-based multiple channel and multiple gate FinMOSFETs
Author(s): Ching-Ting Lee; Hung-Lin Huang; Chun-Yen Tseng; Hsin-Ying Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In recent years, zinc oxide (ZnO)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted much attention, because ZnO-based semiconductors possess several advantages, including large exciton binding energy, nontoxicity, biocompatibility, low material cost, and wide direct bandgap. Moreover, the ZnO-based MOSFET is one of most potential devices, due to the applications in microwave power amplifiers, logic circuits, large scale integrated circuits, and logic swing. In this study, to enhance the performances of the ZnO-based MOSFETs, the ZnObased multiple channel and multiple gate structured FinMOSFETs were fabricated using the simple laser interference photolithography method and the self-aligned photolithography method. The multiple channel structure possessed the additional sidewall depletion width control ability to improve the channel controllability, because the multiple channel sidewall portions were surrounded by the gate electrode. Furthermore, the multiple gate structure had a shorter distance between source and gate and a shorter gate length between two gates to enhance the gate operating performances. Besides, the shorter distance between source and gate could enhance the electron velocity in the channel fin structure of the multiple gate structure. In this work, ninety one channels and four gates were used in the FinMOSFETs. Consequently, the drain-source saturation current (IDSS) and maximum transconductance (gm) of the ZnO-based multiple channel and multiple gate structured FinFETs operated at a drain-source voltage (VDS) of 10 V and a gate-source voltage (VGS) of 0 V were respectively improved from 11.5 mA/mm to 13.7 mA/mm and from 4.1 mS/mm to 6.9 mS/mm in comparison with that of the conventional ZnO-based single channel and single gate MOSFETs.

Paper Details

Date Published: 27 February 2016
PDF: 6 pages
Proc. SPIE 9749, Oxide-based Materials and Devices VII, 97490Q (27 February 2016); doi: 10.1117/12.2206103
Show Author Affiliations
Ching-Ting Lee, National Cheng Kung Univ. (Taiwan)
Hung-Lin Huang, National Cheng Kung Univ. (Taiwan)
Chun-Yen Tseng, National Cheng Kung Univ. (Taiwan)
Hsin-Ying Lee, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9749:
Oxide-based Materials and Devices VII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

© SPIE. Terms of Use
Back to Top