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Proceedings Paper

Field emission from CNT films deposited on porous Si
Author(s): Izabela Stępińska; Halina Wronka; Stanisław Waszuk; Joanna Radomska; Mirosław Kozłowski; Elżbieta Czerwosz; Florea Craciunoiu
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Paper Abstract

The carbon nanotubes films on various type of porous Si substrate were prepared. Three methods of porous Si preparation electrolysis, wet etching with silver nitrate and with potassium hydroxide were used. CNTs films were obtained by two step method containing PVD and CVD process. These yield of field emission depended on the type of film. I-U characteristics and F-N plots are discussed for these films. The short-term stability of emission measurements results are also presented. Depending on technological parameters of Si etching the topography of samples is different and it affects on the emission currents intensity and the electric threshold field.

Paper Details

Date Published: 11 September 2015
PDF: 8 pages
Proc. SPIE 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015, 96624J (11 September 2015); doi: 10.1117/12.2205844
Show Author Affiliations
Izabela Stępińska, Tele & Radio Research Institute (Poland)
Halina Wronka, Tele & Radio Research Institute (Poland)
Stanisław Waszuk, Tele & Radio Research Institute (Poland)
Joanna Radomska, Tele & Radio Research Institute (Poland)
Mirosław Kozłowski, Tele & Radio Research Institute (Poland)
Elżbieta Czerwosz, Tele & Radio Research Institute (Poland)
Florea Craciunoiu, National Institute for Research and Development in Microtechnologies (Romania)


Published in SPIE Proceedings Vol. 9662:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015
Ryszard S. Romaniuk, Editor(s)

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