Share Email Print
cover

Proceedings Paper

Hidden refresh scheme for dual-port gain cell eDRAM
Author(s): Wen Wang; Hongshi Sang; Xubang Shen
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In recent years, the gain cell based eDRAM has got more and more interest for high density and logic-compatible embedded memories. It is widely used in image processing and biomedical applications as it can work as a dual-port memory with a small area. A hidden refresh scheme is proposed for the dual-port gain cell eDRAM to avoid the conflict between accesses and internal refreshes and to increase the data efficiency. By dividing the read, write and refresh operations into several stages, a hidden refresh controller controls to perform the dual-port access and internal refresh in parallel without any conflict. The hidden refresh scheme is integrated into a dual-port gain cell eDRAM of 256X256 in SMIC 130nm logic process. Simulation results demonstrate that the external accesses are performed without delay and dual-port data availability can reach 100%. And the access cycle time is only increased by about 10.9% compared with traditional distribution refresh method. The refresh power of the eDRAM is about 60μW/Mbit at 85°C.

Paper Details

Date Published: 17 December 2015
PDF: 7 pages
Proc. SPIE 9811, MIPPR 2015: Multispectral Image Acquisition, Processing, and Analysis, 98110U (17 December 2015); doi: 10.1117/12.2205735
Show Author Affiliations
Wen Wang, Huazhong Univ. of Science and Technology (China)
Hongshi Sang, Huazhong Univ. of Science and Technology (China)
Xubang Shen, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9811:
MIPPR 2015: Multispectral Image Acquisition, Processing, and Analysis
Jinxue Wang; Zhiguo Cao; Jayaram K. Udupa; Henri Maître, Editor(s)

© SPIE. Terms of Use
Back to Top