Share Email Print
cover

Proceedings Paper

Multi-element double ring infrared detector based on InSb
Author(s): Mo Li; Hui Lv; Li Guo; Zhu Liu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A multi-element double ring infrared detector based on InSb p-n photodiodes is presented. The presented detector includes an outer ring detector and an inner ring detector. Each ring consist 10 detector elements, five mid-wave infrared detector elements and five short wave infrared detector elements. Two wavebands of 3.5–5 μm and 1.5–3 μm in mid-wave infrared and short wave infrared are adopted. The mid-wave infrared and short wave infrared detector elements are arranged alternately and close to each other to form detection pair. Between the adjacent detector elements, there is an interval to avoid cross talk. Dual band filter thin films are directly coated on the photodiode surface to form a dual band infrared detector. The double ring detector which can perform dual band IR counter-countermeasures can track target effectively under infrared countermeasure conditions.

Paper Details

Date Published: 15 October 2015
PDF: 6 pages
Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 967433 (15 October 2015); doi: 10.1117/12.2203196
Show Author Affiliations
Mo Li, Luoyang Optoelectro Technology Development Ctr. (China)
Hui Lv, Luoyang Optoelectro Technology Development Ctr. (China)
Li Guo, Luoyang Optoelectro Technology Development Ctr. (China)
Zhu Liu, Luoyang Optoelectro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 9674:
AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology
Haimei Gong; Nanjian Wu; Yang Ni; Weibiao Chen; Jin Lu, Editor(s)

© SPIE. Terms of Use
Back to Top