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Proceedings Paper

High-durability phase-shift film with variable transmittance
Author(s): Osamu Nozawa; Hiroaki Shishido; Takenori Kajiwara
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Paper Abstract

In order to maintain the lithographic margin and to have sufficient image resolution, attenuated phase shift masks are widely used as a resolution enhancement technique. To improve the radiation durability of the phase shift film, we have developed low oxidation MoSi shifters, such as A6L2, as one option for improving radiation durability. But to provide the best radiation durability, we have developed a new approach eliminating the molybdenum from the phase shift film and introduced a Silicon-Nitride (Si-N) based attenuated phase shift film. Traditionally the transmittance of the phase shift layer is usually around 6%. In the case of a pure Si3N4 film, the transmittance with 180 degree phase shift is around 18%. But, by controlling film structure with a combination of Si-N the transmittance can be tuned to the customers desired transmission value for high durability Mo free attenuated phase shift films.

Paper Details

Date Published: 28 October 2015
PDF: 9 pages
Proc. SPIE 9635, Photomask Technology 2015, 963517 (28 October 2015); doi: 10.1117/12.2202596
Show Author Affiliations
Osamu Nozawa, HOYA Corp. (Japan)
Hiroaki Shishido, HOYA Corp. (Japan)
Takenori Kajiwara, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 9635:
Photomask Technology 2015
Naoya Hayashi, Editor(s)

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