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Proceedings Paper

Wafer-scale epitaxial graphene on SiC for sensing applications
Author(s): Mikael Karlsson; Qin Wang; Yichen Zhao; Wei Zhao; Muhammet S. Toprak; Tihomir Iakimov; Amer Ali; Rositza Yakimova; Mikael Syväjärvi; Ivan G. Ivanov
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Paper Abstract

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2’’ 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene’s uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer’s method were also fabricated for comparison.

Paper Details

Date Published: 22 December 2015
PDF: 7 pages
Proc. SPIE 9668, Micro+Nano Materials, Devices, and Systems, 96685T (22 December 2015); doi: 10.1117/12.2202440
Show Author Affiliations
Mikael Karlsson, Acreo Swedish ICT AB (Sweden)
KTH Royal Institute of Technology (Sweden)
Qin Wang, Acreo Swedish ICT AB (Sweden)
Yichen Zhao, KTH Royal Institute of Technology (Sweden)
Wei Zhao, Acreo Swedish ICT AB (Sweden)
KTH Royal Institute of Technology (Sweden)
Muhammet S. Toprak, KTH Royal Institute of Technology (Sweden)
Tihomir Iakimov, Graphensic AB (Sweden)
Amer Ali, Graphensic AB (Sweden)
Rositza Yakimova, Graphensic AB (Sweden)
Mikael Syväjärvi, Graphensic AB (Sweden)
Ivan G. Ivanov, Linköping Univ. (Sweden)

Published in SPIE Proceedings Vol. 9668:
Micro+Nano Materials, Devices, and Systems
Benjamin J. Eggleton; Stefano Palomba, Editor(s)

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