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Proceedings Paper

Simulation of semiconductor nanowire photodetectors with high photoconductive gain
Author(s): Hanqing Cao; Jianjun Lai; Ji Zhu; Hongwei Li; Changhong Chen; Ying Huang
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Paper Abstract

In this paper, first we simulate the light absorption of individual cylindrical nanowire with the diameter ranging from 100 to 300 nm, it is found that the absorption peak has a red-shift along with the increased diameter. Then some numerical simulations have been done to elucidate the high gain mechanism and investigate the dependence of photoconductive gain on various parameters, such as doping, surface state density, and structure. The results show that optimizing these parameters appropriately can lead photoconductive gain up to 106, and give a reliable guiding to the actual device design.

Paper Details

Date Published: 15 October 2015
PDF: 7 pages
Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742L (15 October 2015); doi: 10.1117/12.2202385
Show Author Affiliations
Hanqing Cao, Huazhong Univ. of Science and Technology (China)
Jianjun Lai, Huazhong Univ. of Science and Technology (China)
Ji Zhu, Huazhong Univ. of Science and Technology (China)
Hongwei Li, Huazhong Univ. of Science and Technology (China)
Changhong Chen, Huazhong Univ. of Science and Technology (China)
Ying Huang, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9674:
AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology
Haimei Gong; Nanjian Wu; Yang Ni; Weibiao Chen; Jin Lu, Editor(s)

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