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Proceedings Paper

Simulation and optimization of p-i-n In0.53Ga0.47As/InP photodetector
Author(s): Min Zhu; Jun Chen; Jiabing Lv; Hengjing Tang; Xue Li
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Paper Abstract

In this paper, the two-dimensional (2-D) simulations of p-i-n type InP/In0.53Ga0.47As/InP photodetector at low bias are presented. The modeling results fit the experimental results well, verifying the validity of our model and the desirability of the simulated results. In order to further optimize the detector structure, the effects of thickness and doping concentration of the absorption layer on the dark current are both simulated and discussed, the results can be explained by the depletion region width in the junction area, and the details are shown in the energy band diagrams and the electric field maps of the p-i-n InP/In0.53Ga0.47As/InP photodetector.

Paper Details

Date Published: 15 October 2015
PDF: 6 pages
Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742D (15 October 2015); doi: 10.1117/12.2201032
Show Author Affiliations
Min Zhu, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)
Jiabing Lv, Soochow Univ. (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 9674:
AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology
Haimei Gong; Nanjian Wu; Yang Ni; Weibiao Chen; Jin Lu, Editor(s)

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