Share Email Print
cover

Proceedings Paper

Carrier generation in high gain GaAs photoconductive semiconductor switches
Author(s): Hong Liu; Li Zheng; Wei Yang; Xiaoling Zhu; Yuting Yang; Dan Wu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The carrier generation in high gain GaAs photoconductive semiconductor switches (PCSSs) is researched. Based on the "electron avalanche domain (EAD)" ideas, the physical process of carrier generation is explained. This analysis supports the current filaments velocities that can exceed the value of 2 × 109 cm/s. The results of this theoretical investigation are consistent with those of the reported experimental observations.

Paper Details

Date Published: 15 October 2015
PDF: 5 pages
Proc. SPIE 9671, AOPC 2015: Advances in Laser Technology and Applications, 96711D (15 October 2015); doi: 10.1117/12.2199894
Show Author Affiliations
Hong Liu, Chengdu Univ. (China)
Li Zheng, Chengdu Technology Univ. (China)
Wei Yang, Chengdu Univ. (China)
Xiaoling Zhu, Chengdu Univ. (China)
Yuting Yang, Chengdu Univ. (China)
Dan Wu, Chengdu Univ. (China)


Published in SPIE Proceedings Vol. 9671:
AOPC 2015: Advances in Laser Technology and Applications
Shibin Jiang; Lijun Wang; Chun Tang; Yong Cheng, Editor(s)

© SPIE. Terms of Use
Back to Top