Share Email Print
cover

Proceedings Paper

Research of mesa type extended wavelength 64x64 In0.83Ga0.17As detector
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

InxGa1-xAs ternary compound is suitable for detection in the shortwave infrared (1-3μm) band. The alloy In0.53Ga0.47As is lattice-matched to InP substrate and has a wavelength response between 0.9μm to 1.7μm at room temperature. The increase of indium composition can extend the wavelength response to longer infrared wave. With the Indium content 0.83, the cutoff wavelength can be extended to 2.6μm. In this paper, we reported the performance of 64x64 pixels mesa-type back-illuminated extended wavelength InGaAs detector arrays. The mesa type detectors were fabricated by ICP etching, side-wall and surface passivation by ICPCVD (inductively coupled plasma chemical vapor deposition) based on the MBE-grown p-i-n In0.83Al0.17As/In0.83Ga0.17As/InxAl1-xAs/InP epitaxial materials. The I-V characteristics and electro-optical performances of these detectors at different temperatures were measured, and the properties such as dark current, response spectra, responsivity, detectivity were analyzed. The results indicate that the dark current of In0.83Ga0.17As photodiodes decreases with decreasing temperature, varying from 4×10-4A/cm2 at 290K to 1.7×10-8A/cm2 at 180K. The spectral response showed slightly blue shift while the detectors were cooling down, and the cut-off wavelength is 2.57μm at room temperature and 2.43μm at 200K, respectively. The dark current density is 115nA/cm2 at 200K and -10mV bias voltage. The peak detectivity is 6.08E11cmHz1/2W-1.

Paper Details

Date Published: 15 October 2015
PDF: 8 pages
Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 967420 (15 October 2015); doi: 10.1117/12.2199826
Show Author Affiliations
Shuangyan Deng, Shanghai Institute of Technical Physics (China)
Ping Li, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Tao Li, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Xiumei Shao, Shanghai Institute of Technical Physics (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9674:
AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology
Haimei Gong; Nanjian Wu; Yang Ni; Weibiao Chen; Jin Lu, Editor(s)

© SPIE. Terms of Use
Back to Top