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Proceedings Paper

Study of photoemission mechanism for varied doping GaN photocathode
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Paper Abstract

Negative electron affinity (NEA) GaN photocathode has many virtues, such as high quantum efficiency, low dark current, concentrated electrons energy distribution and angle distribution, adjustive threshold and so on. The quantum efficiency is an important parameter for the preparation and evaluation of NEA GaN photocathode. The varied doping GaN photocathode has the directional inside electric field within the material, so the higher quantum efficiency can be obtained. The varied doping NEA GaN photocathode has better photoemission performance. According to the photoemission theory of NEA GaN photocathode, the quantum efficiency formulas for uniform doping and varied doping NEA GaN photocathodes were given. In the certain condition, the quantum efficiency formula for varied doping GaN photocathode consists with the uniform doping. The activation experiment was finished for varied doping GaN photocathode. The cleaning method and technics for varied doping GaN photocathode were given in detail. To get an atom clean surface, the heat cleaning must be done after the chemical cleaning. Using the activation and evaluation system for NEA photocathode, the varied doping GaN photocathode was activated with Cs and O, and the photocurrent curve for varied doping GaN photocathode was gotten.

Paper Details

Date Published: 15 October 2015
PDF: 6 pages
Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96741X (15 October 2015); doi: 10.1117/12.2199773
Show Author Affiliations
Jianliang Qiao, Nanyang Institute of Technology (China)
Yuan Xu, Nanjing Univ. of Science and Technology (China)
Jun Niu, Nanyang Institute of Technology (China)
Youtang Gao, Nanyang Institute of Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9674:
AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology
Haimei Gong; Nanjian Wu; Yang Ni; Weibiao Chen; Jin Lu, Editor(s)

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