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Proceedings Paper

Photomask linewidth comparison by PTB and NIST
Author(s): D. Bergmann; B. Bodermann; H. Bosse; E. Buhr; G. Dai; R. Dixson; W. Häßler-Grohne; K. Hahm; M. Wurm
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Paper Abstract

We report the initial results of a recent bilateral comparison of linewidth or critical dimension (CD) calibrations on photomask line features between two national metrology institutes (NMIs): the National Institute of Standards and Technology (NIST) in the United States and the Physikalisch-Technische Bundesanstalt (PTB) in Germany. For the comparison, a chrome on glass (CoG) photomask was used which has a layout of line features down to 100 nm nominal size. Different measurement methods were used at both institutes. These included: critical dimension atomic force microscopy (CD-AFM), CD scanning electron microscopy (CD-SEM) and ultraviolet (UV) transmission optical microscopy. The measurands are CD at 50 % height of the features as well as sidewall angle and line width roughness (LWR) of the features. On the isolated opaque features, we found agreement of the CD measurements at the 3 nm to 5 nm level on most features – usually within the combined expanded uncertainties of the measurements.

Paper Details

Date Published: 2 November 2015
PDF: 14 pages
Proc. SPIE 9636, Scanning Microscopies 2015, 96360S (2 November 2015); doi: 10.1117/12.2199453
Show Author Affiliations
D. Bergmann, Physikalisch-Technische Bundesanstalt (Germany)
B. Bodermann, Physikalisch-Technische Bundesanstalt (Germany)
H. Bosse, Physikalisch-Technische Bundesanstalt (Germany)
E. Buhr, Physikalisch-Technische Bundesanstalt (Germany)
G. Dai, Physikalisch-Technische Bundesanstalt (Germany)
R. Dixson, National Institute of Standards and Technology (United States)
W. Häßler-Grohne, Physikalisch-Technische Bundesanstalt (Germany)
K. Hahm, Physikalisch-Technische Bundesanstalt (Germany)
M. Wurm, Physikalisch-Technische Bundesanstalt (Germany)

Published in SPIE Proceedings Vol. 9636:
Scanning Microscopies 2015
Michael T. Postek; Dale E. Newbury; S. Frank Platek; Tim K. Maugel, Editor(s)

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