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Proceedings Paper

Enhancement of external quantum efficiency of GaAs light emitting diodes on GaAs substrate with photonic crystal structures
Author(s): Mengyao Li; Honglou Zhen; Youliang Jing; Han Wang; Liang Li; Ning Li
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Paper Abstract

Near infrared light emitting diodes (LEDs) play an important role in infrared photodetectors; however, external quantum efficiency of GaAs LEDs is greatly confined as a result of critical angle and Fresnel diffraction. In this study, polystyrene spheres are used to fabricate photonic crystal. A ring-shaped ohmic contact was introduced to the device, and the current-voltage curves and light emitting efficiency were measured to characterize the property of device. The LED device with surface nano-structure exhibited better external quantum efficiency (EQE) and improved light extraction efficiency (LEE) in near infrared light emitting area compared to non-structure device.

Paper Details

Date Published: 15 October 2015
PDF: 5 pages
Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96741D (15 October 2015); doi: 10.1117/12.2199407
Show Author Affiliations
Mengyao Li, Shanghai Institute of Technical Physics (China)
Honglou Zhen, Shanghai Institute of Technical Physics (China)
Youliang Jing, Shanghai Institute of Technical Physics (China)
Han Wang, Shanghai Institute of Technical Physics (China)
Liang Li, Shanghai Institute of Technical Physics (China)
Ning Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9674:
AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology
Haimei Gong; Nanjian Wu; Yang Ni; Weibiao Chen; Jin Lu, Editor(s)

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