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Proceedings Paper

High-power and low-loss room temperature operation of 2.4μm GaInAsSb/AlGaAsSb type-I strained quantum-well laser diodes
Author(s): Yuzhi Song; Jiakun Song; Yu Zhang; Kangwen Li; Yun Xu; Guofeng Song; Lianghui Chen
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Paper Abstract

High power GaSb based type-I GaInAsSb/AlGaAsSb three quantum wells laser diodes emitting at 2.4 μm were optimized and fabricated. The laser wafer was grown with solid source Molecular Beam Epitaxy System. With optimizations of the epitaxial structure design and the ohmic contact, the operation voltage and the internal loss decreased; the internal quantum efficiency and output power increased. The internal quantum efficiency was determined about 80.1% and the internal loss was 12 cm-1 by measuring laser diodes with different cavity lengths. An uncoated 2-mm-long laser diode with 90-μm-wide aperture exhibited a threshold current density of 222 A/cm2 (74 A/cm2 per quantum well), a continuous wave output power of 232 mW and a quasi-continuous wave (1 kHz, 10 μs) output power of 1 W at room temperature.

Paper Details

Date Published: 15 October 2015
PDF: 6 pages
Proc. SPIE 9671, AOPC 2015: Advances in Laser Technology and Applications, 96710P (15 October 2015); doi: 10.1117/12.2199252
Show Author Affiliations
Yuzhi Song, Institute of Semiconductors (China)
Jiakun Song, Institute of Semiconductors (China)
Yu Zhang, Institute of Semiconductors (China)
Kangwen Li, Institute of Semiconductors (China)
Yun Xu, Institute of Semiconductors (China)
Guofeng Song, Institute of Semiconductors (China)
Lianghui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 9671:
AOPC 2015: Advances in Laser Technology and Applications
Shibin Jiang; Lijun Wang; Chun Tang; Yong Cheng, Editor(s)

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