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Proceedings Paper

The influence of thermal treatment on the passivation of SiNx film and the dark current of p-i-n InGaAs detector
Author(s): Gaoqi Cao; Hengjing Tang; Xiumei Shao; Rui Wang; Qingfa Li; Jifeng Cheng; Tao Li; Xue Li; Haimei Gong
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Paper Abstract

In this paper, we focus on the influence of thermal treatment on the passivation of silicon nitride (SiNx) film of p-i-n InGaAs detector. In our experiment, the perimeter/area (P/A) test diodes are fabricated by using two different device processes, and the relationship between the dark current density and P/A is investigated. The results indicate that the thermal treatment in the vacuum can be able to improve the passivation SiNx film effect and thus suppress the perimeterrelated current with the decrease of two orders of magnitude. Then the analysis of dark current source is carried out. The result shows that the sample with SiNx film through thermal treatment is composed of diffusion current and ohmic current, on the contrary, the other mainly consists of surface leakage current and diffusion current. It is illustrated that the passivation effect of SiNx was strengthened after thermal treatment and surface leakage current can be suppressed.

Paper Details

Date Published: 15 October 2015
PDF: 5 pages
Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 967411 (15 October 2015); doi: 10.1117/12.2199226
Show Author Affiliations
Gaoqi Cao, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Xiumei Shao, Shanghai Institute of Technical Physics (China)
Rui Wang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Qingfa Li, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Jifeng Cheng, Shanghai Institute of Technical Physics (China)
Tao Li, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9674:
AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology
Haimei Gong; Nanjian Wu; Yang Ni; Weibiao Chen; Jin Lu, Editor(s)

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