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Proceedings Paper

Development of a reflectometer for a large EUV mirror in NewSUBARU
Author(s): Haruki Iguchi; Hiraku Hashimoto; Masaki Kuki; Tetsuo Harada; Takeo Watanabe; Hiroo Kinoshita
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Paper Abstract

In extreme-ultraviolet (EUV) lithography, mirror optics is coated with a Mo/Si multilayer film. Since throughput of an EUV system is directly depends on the multilayer film reflectance, we have developed a mask reflectometer to evaluate the reflectance in BL-10 beamline of the NewSUBARU synchrotron facility. In particular, the EUV output power from a EUV light source relates to the reflectance of a collector mirror. Thus, we installed a new large reflectometer in BL-10 beamline to evaluate the collector mirror reflectance. The reflectometer can measure a mirror with a diameter of up to 800 mm, a thickness of 250 mm, and a weight of 50 kg. The entire sample surface can be measured in spherical coordinate using vertical γ and rotation Φ axis. Each axis positions are measured with optical encoders precisely, and are controlled in closed-loop operation. We measured reflectance of an EUV mask using the large reflectometer and the mask reflectometer. The peak reflectance was well consisted with the two reflectometer within 0.1%. The large reflectometer has high reproducibility of the peak reflectance measurement.

Paper Details

Date Published: 9 July 2015
PDF: 7 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 965819 (9 July 2015); doi: 10.1117/12.2199014
Show Author Affiliations
Haruki Iguchi, Univ. of Hyogo (Japan)
Hiraku Hashimoto, Univ. of Hyogo (Japan)
Masaki Kuki, Univ. of Hyogo (Japan)
Tetsuo Harada, Univ. of Hyogo (Japan)
Takeo Watanabe, Univ. of Hyogo (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)

Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

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