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Proceedings Paper

Quantitative analysis of CD degradation induced by the fogging effect in e-beam lithography
Author(s): Shao-Wen Chang; Tzu-Yi Wang; Ta-Cheng Lien; Chia-Jen Chen; Chih-Cheng Lin; Sin-Chang Lee; Anthony Yen
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Paper Abstract

In this paper, a quantitative method to analyze the effective range of fogging effect from massive data is presented. According to the calculated effective range, we use two approaches to correct the pattern-dependent CD error that come from e-beam writing. One is the fogging effect correction(FEC), which uses a Gaussian distributed model to describe FE. Second, we implement dosage modulation based on the assumption that the error caused by FE is linearly proportional to the pattern density of a mask. In summary, we are able to successfully predict the map of CD error for various layouts, and correct the error caused by FE in mask-making.

Paper Details

Date Published: 28 October 2015
PDF: 5 pages
Proc. SPIE 9635, Photomask Technology 2015, 96350I (28 October 2015); doi: 10.1117/12.2197838
Show Author Affiliations
Shao-Wen Chang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Tzu-Yi Wang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ta-Cheng Lien, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chia-Jen Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chih-Cheng Lin, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Sin-Chang Lee, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 9635:
Photomask Technology 2015
Naoya Hayashi, Editor(s)

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