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Proceedings Paper

The study of phase effects in EUV mask pattern defects
Author(s): Yow-Gwo Wang; Andy Neureuther; Patrick Naulleau
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Paper Abstract

In this paper, we present a detail study of the impact of material-induced phase effect on the EUV mask absorber defect through-focus behavior. Illumination, material properties, and defect size are shown to have different impacts on the behavior. Also, we study the possibility of using alternative absorber materials to reduce the phase effects on the defect. Based on the mask near field distribution, energy confinement and phase accumulation can be reduced with new absorber materials. The defect sensitivity is reduced and the peak signal position is closer to the best focus due to less material-induced phase. Moreover, the novel pupil engineering method can utilize the phase induced by the material to improve the defect sensitivity of absorber defect by adding lens phase shifts in the pupil plane. At least 29% enhancement of the absorber defect signal at focus can be achieved by optimum lens phase shifts.

Paper Details

Date Published: 28 October 2015
PDF: 7 pages
Proc. SPIE 9635, Photomask Technology 2015, 96350D (28 October 2015); doi: 10.1117/12.2197769
Show Author Affiliations
Yow-Gwo Wang, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Andy Neureuther, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 9635:
Photomask Technology 2015
Naoya Hayashi, Editor(s)

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