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Proceedings Paper

TCAD analysis of graphene silicon Schottky junction solar cell
Author(s): Yawei Kuang; Yushen Liu; Yulong Ma; Jing Xu; Xifeng Yang; Jinfu Feng
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Paper Abstract

The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.

Paper Details

Date Published: 22 August 2015
PDF: 6 pages
Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560W (22 August 2015); doi: 10.1117/12.2197678
Show Author Affiliations
Yawei Kuang, Changshu Institute of Technology (China)
Yushen Liu, Changshu Institute of Technology (China)
Yulong Ma, Changshu Institute of Technology (China)
Jing Xu, Changshu Institute of Technology (China)
Xifeng Yang, Changshu Institute of Technology (China)
Jinfu Feng, Changshu Institute of Technology (China)

Published in SPIE Proceedings Vol. 9656:
International Symposium on Photonics and Optoelectronics 2015
Zhiping Zhou, Editor(s)

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